New method realize ohmic contacts in n-type MoS₂ transistors at cryogenic temperatures

Semiconducting transition metal dichalcogenides (TMDs) are a class of layered materials exhibiting unique optoelectronic properties that could be leveraged to develop transistors, sensors and other nanoelectronics. Despite their advantages, creating robust ohmic contacts that connect a metal electrode in transistors to semiconducting TMDs at cryogenic temperatures has proved challenging.